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[130]. J Z Zhao, W Z Xu, et al.,"4H-SiC-Based Low-Noise Front-End Charge Coupling Transistor for 0.9% Radiation Energy Resolution", IEEE Transactions on Electron Devices ,72(7): 3915-3919 (2025)

[129]. C Zou,T Li et al., "Investigation of electrical performance degradation and trap states in depletion-mode metal-insulator semiconductor (MIS) GaN HEMTs under heavy ion irradiation", 6th International Conference on Radiation Effects of Electronic Devices, 1-4 (2025)

[128]. Y Zhou,T Li et al., "Dynamic overvoltage and energy loss in p-GaN HEMTs under ultraviolet pulsed laser-induced single event irradiation", Proceedings of the 37th lnternational Symposium on Power Semiconductor Devices & lCs, Kumamoto,285-288 (2025)

[127]. Y F Wang, H. Du, P. Yang, W. Xu, D. Zhou, F. Ren, D. Chen, R. Zhang, Y. Zheng and H. Lu, “4H-SiC Position-sensitive Detector Working in Extreme Ultraviolet Wavelength Band,” IEEE Electron Device Letters 46(2): 243-246 (2025)

[126]. Q Wei, F   Zhou, T Ma, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu,   "058 mΩ⋅cm²/523 V GaN Vertical Schottky Barrier Diode With 156   kA/cm² Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion   Implantation", IEEE Electron Device Letters 45(6): 964-967 (2024)

[125].Y F Wang, P. Yang, H. Du, W. Xu, D. Zhou, F. Ren, D. Chen, R. Zhang, Y. Zheng and H. Lu, “4H-SiC Tetra-lateral Position Sensitive Detector for Ultraviolet Measurements,” IEEE Transactions on Electron Devices 71(8): 4829-4833 (2024)

[124]. Y F Wang, H. Du, P. Yang,W. Xu, D. Zhou, F. Ren, D. Chen, R. Zhang, Y. Zheng and H. Lu, “Over 98% Linearity 4H-SiC UV Pin-cushion Position-sensitive Detector Fabricated by Selective area Ion Implantation,” IEEE Electron Device Letters, 45(12):2447-2450 (2024)

[123]. Y Zhou,T Li et al., "High detection efficiency 4H-SiC avalanche photodiode with off-center top electrode structure",IEEE Photon. Technol. Lett.,37(5):261-264 (2025)

[122]. T Y Zhou, F   Zhou, Q Y Chen, X F Lu, W Z Xu, D Zhou, F F Ren, D J Chen,Y Y Xia, L K Wu, K   Wang, Y H Li, T G Zhu, R Zhang, Y D Zheng, and H Lu, "Normally-off   Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness", 2024 36th   International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2024)

[121].  F Zhou, W   Qi, T Ma, C Zou, J F Qian, W Z Xu, Y W Wang, D Zhou, F F Ren, D J Chen, R   Zhang, Y D Zheng, and H Lu, "Investigation of Trap States and Reverse   Leakage in Fully-Vertical GaN Schottky Barrier Diodes with Laser Lift-Off   Substrate", 2024 36th International Symposium on Power Semiconductor   Devices and ICs (ISPSD) (2024)

[120]. F Zhou, L H   Mo, Z L Hu, Q Z Yu, Can Zou, W Z Xu, F F Ren, D Zhou, D J Chen, Y D Zheng, R   Zhang, and H Lu, "15-kV AlGaN/GaN MIS-HEMT with 3-D Stacking   Pad-Connected Schottky Structure Demonstrating Radiation Robustness Against   Atmospheric Neutrons", IEEE Electron Device Letters: 1-1 (2024)

[119]. F Zhou, C   Zou, T Y Zhou, W Z Xu, F F Ren, D Zhou, Y W Wang, D J Chen, Y Y Xia, L K Wu,   K Wang, Y H Li, T G Zhu, Y D Zheng, R Zhang, and H Lu, "Irradiation   Hardened p-GaN HEMTs Enabling 558 V Single-Event Hardness at 757 MeV·cm2/mg   and 95% Conversion Efficiency at 300 W/500 kHz", IEEE Electron Device   Letters 45(6):976-979 (2024)

[118]. Q Wei, F   Zhou, T Ma, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu,   "058 mΩ⋅cm²/523 V GaN Vertical Schottky Barrier Diode With 156   kA/cm² Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion   Implantation", IEEE Electron Device Letters 45(6): 964-967 (2024)

[117]. L J Guo, F   Zhou, W Z Xu, F F Ren, D Zhou, D J Chen, R Zhang, Y D Zheng, and H Lu,   “Insights into Dynamic Switching Behavior and Electric Field Distribution of   Depletion-Mode GaN HEMT with Bonding Pad Over Active Layout”, Semiconductor   Science and Technology 39(4): 045011 (2024)

[116]. Y F Wang, Z   Y Wang, W Z Xu, F Zhou, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H   Lu, “High-performance 4H-SiC EUV Photodiode with Lateral p-n Junction   Fabricated by Selective-area Ion Implantation”, IEEE Electron Device Letters   45(5): 857-860 (2024)

[115].  Y F Wang, W   X Li, W Z Xu, F Zhou, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H   Lu, “Reach-Through-Collector Based 4H-SiC Phototransistor Enabling   nW/cm2 UV Detection,” IEEE Electron Device Letters 45(4): 617-620 (2024)

[114]. J H Zhang,   Z S Liu, J D Ye, W Z Xu, F Zhou, D Zhou, R Zhang, F F Ren, and H Lu,   "Real-Time Terahertz Modulation Using Gold-MoS2 Metasurface with   Electromagnetically Induced Transparency-Like Resonance", IEEE Photonics   Journal 16(3): 1-5 (2024)

[113].  T Y Li, Y   Zhou, X Q Tao, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H   Lu, "Study of Gain Spatial Nonuniformity in n-on-p and p-on-n 4H-SiC   Avalanche Photodiodes", IEEE Photonics Technology Letters 36(7): 465-468   (2024)

[112]. Z S Liu, J   H Zhang, J D Ye, Y T Shi, J Fu, Y W Wang, W Z Xu, D Zhou, F Zhou, R Zhang, H   Lu, and F F Ren, "Improving AlGaN-based deep-ultraviolet light-emitting   diodes: SiO2 passivation and size optimization for enhanced   optoelectronic performance", Applied Physics Letters 124(16):161112   (2024)

[111]. Y Q Wei, W   Z Xu, H Qu, R J Xu, J Z Zhao, D Zhou, F Zhou, F F Ren, D J Chen, R   Zhang, Y D Zheng, and H Lu, "GaN-Based Low-Energy X-Ray Single Photon   Decetor With Photon Energy Resolution and Fast Response", IEEE   Photonics Technology Letters 36(2): 123-126 (2024)

[110]. H Y Du, W X   Li, Y F Wang, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H   Lu, "A Pulsed Ultraviolet Laser Positioning System Based on 4H-SiC   Four-Quadrant Photodetectors", IEEE Photonics Technology Letters 36(11):   697-700 (2024)

[109]. X Q Tao, T   Y Li, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu,   "Dark Count Analysis in 4H-SiC Based UV Avalanche Photodiodes with   Effective After-Pulse Suppression", IEEE Photonics Technology Letters   36(9): 585-588 (2024)

[108]. P C Yang, Y   F Wang, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H, Lu,   “Ultraviolet Spot Position Measurement Based on 4H-SiC Quadrant   Photodetectors”, Chinese Optics Letters 22(11) (2024)

[107]. F Zhou, W Z   Xu, Y L Jin, T Y Zhou, F F Ren, D Zhou, Y Y Xia, L K Wu, Y H Li, T G Zhu, D J   Chen, R Zhang, Y D Zheng, and H Lu, "30-V-Threshold-Voltage p-GaN HEMTs   with Low-Loss Reverse Conduction capability", 2023 35th International   Symposium on Power Semiconductor Devices and ICs (ISPSD): 370-373 (2023)

[106]. F Zhou, H H   Gong, M Xiao, Y W Ma, Z P Wang, X X Yu, L Li, L Fu, H H Tan, Y Yang, F F Ren,   S L Gu, Y D Zheng, H Lu, R Zhang, Y H Zhang, and J D Ye, "An   avalanche-and-surge robust ultrawide-bandgap heterojunction for power   electronics", Nature Communications 14(1): 1-10 (2023)

[105]. W X Li, Y F   Wang, G Y Gu, F F Ren, D Zhou, W Z Xu, D J Chen, R Zhang, Y D Zheng, and H   Lu, "Polarization-Assisted AlGaN Heterostructure-Based Solar-Blind   Ultraviolet MSM Photodetectors with Enhanced Performance", IEEE   Transactions on Electron Devices 70(7): 3468-3474 (2023)

[104]. T Y Li, X Q   Tao, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu,   "Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes   Fabricated by N Ion Implantation", IEEE Photonics Technology Letters   35(14): 761-764 (2023)

[103]. Y L Jin, F   Zhou, W Z Xu, Z P Wang, T Y Zhou, D Zhou, F F Ren, Y Y Xia, L K Wu, Y H Li, T   G Zhu, D J Chen, R Zhang, J D Ye, Y D Zheng, and H Lu,   "High-VTH E-Mode GaN HEMTs with Robust Gate-Bias-Dependent   VTH Stability Enabled by Mg-Doped p-GaN Engineering", IEEE   Transactions on Electron Devices 70(11): 5596-5602 (2023)

[102]. Z S Liu, X   X Yu, J H Zhang, X H Liu, J D Ye, F F Ren, Y W Wang, W Z Xu, D Zhou, R Zhang,   Y D Zheng, and H Lu, “Enhanced light output from deep ultraviolet   light-emitting diodes enabled by high-order modes on a photonic crystal   surface”, Optics Letters 48(2):247-250 (2023)

[101]. X H Liu, F   F Ren, Z P Wang, X Y Sun, Q S Yang, Y W Wang, J D Ye, X F Chen, W Z Xu, D   Zhou, X G Xu, R Zhang, and H Lu, “Dynamic reactions of defects in   ion-implanted 4H-SiC upon high temperature annealing”, Journal of Physics   D-Applied Physics 56(23):235102 (2023)

[100]. L J Guo, W   Z Xu, Q Wei, X H Liu, T Y Li, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng,   and H Lu, “Demonstration and modeling of unipolar-carrier-conduction GaN   Schottky-pn junction diode with low turn-on voltage”, Chinese Physics B   32(2): 027302 (2023)

[99]. Y F Wang, W X Li, D Zhou, W Z Xu, F F Ren, D J Chen, R   Zhang, Y D Zheng, and H Lu, “Performance Analysis of a 4H-SiC n-p-n   Phototransistor With Floating Base for Ultraviolet Light Detection”, IEEE   Transactions on Electron Devices 70(1):159-166 (2023)

[98]. Q S Yang, Q Liu, L J Guo, S C Hao, D Zhou, W Z Xu, B Q   Zhang, F Yang, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu, “High   Resolution 4H-SiC p-i-n Radiation Detectors with Low-Voltage Operation”, IEEE   Electron Device Letters 43(12):2161-2164 (2022)

[97]. Y H Du, W Z Xu, H H Gong, J D Ye, F Zhou, F F Ren, D Zhou, D   J Chen, R Zhang, Y D Zheng, and H Lu, “Current transport dynamics and   stability characteristics of the NiOx based gate structure for   normally-off GaN HEMTs”, Journal of Physics D-Applied Physics 55(47):474001   (2022)

[96]. X H Liu, F F Ren, J D Ye, S X Wang, W Z Xu, D Zhou, M B Yu,   R Zhang, Y D Zheng, and H Lu, “Enhanced single photon emission in silicon   carbide with Bull's eye cavities”, Chinese Physics B 31(10):104206 (2022)

[95]. Z F Li, D Zhou, W Z Xu, F F Ren, R Zhang, Y D Zheng, and H   Lu, “Demonstration of a Solar-Blind Single-Photon Imaging Lidar Based on SiC   Ultraviolet Avalanche Photodiodes”, IEEE Photonics Technology Letters 34(17):   935-938 (2022)

[94]. F Zhou, W Z Xu, Y L Jin, T Y Zhou, F F Ren, D Zhou, D N   Chen, R Zhang, Y D Zheng, and H Lu, “Flip-Chip AlGaN/GaN Schottky Barrier   Diode Using Buried-Ohmic Anode Structure With Robust Surge Current Ruggedness   and Transient Energy Sustaining Capability”, IEEE Transactions on Electron   Devices 69(10):5664-5670 (2022)

[93]. Q Wei, F Zhou, W Z Xu, F F Ren, D Zhou, D J Chen, R Zhang, Y   D Zheng, and H Lu, “Demonstration of Vertical GaN Schottky Barrier Diode With   Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic   Bonding and Laser Lift-Off Techniques”, IEEE Journal of the Electron Devices   Society 10:1003-1008 (2022)

[92]. F Zhou, W Z Xu, F F Ren, Y Y Xia, L K Wu, T G Zhu, D J Chen,   R Zhang, Y D Zheng, and H Lu, “12 kV/25 A Normally off P-N Junction/AlGaN/GaN   HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage   Capability”, IEEE Transactions on Power Electronics 37(1):26-30 (2022)

[91]. C K Zeng, W Z Xu, Y Y Xia, K Wang, F F Ren, D Zhou, Y H Li,   T G Zhu, D J Chen, R Zhang, Y D Zheng, and H Lu, “Normally-off GaN HEMTs with   InGaN p-gate cap layer formed by polarization doping”, Applied Physics   Express 15(1):016502 (2022)

[90]. F Zhou, W Z Xu, F F Ren, D Zhou, D J Chen, R Zhang, Y D   Zheng, T G Zhu, and H Lu, “Demonstration of Avalanche and Surge Current   Robustness in GaN Junction Barrier Schottky Diode With 600-V/10-A Switching   Capability”, IEEE Transactions on Power Electronics 36(11): 12163-12167   (2021)

[89]. F Zhou, H H Gong, Z P Wang, W Z Xu, X X Yu, Y Yang, F F Ren,   S L Gu, R Zhang, Y D Zheng, H Lu, and J D Ye, “Over 18   GW/cm2 beveled-mesa NiO/beta-Ga2O3 heterojunction diode with 800   V/10 A nanosecond switching capability”, Applied Physics Letters   119(26):262103 (2021)

[88]. Q Liu, D Zhou, W Z Xu, D J Chen, F F Ren, R Zhang, Y D   Zheng, and H Lu, “High sensitivity x-ray detectors based on 4H-SiC p-i-n   structure with 80 mu m thick intrinsic layer”, Journal of Vacuum Science   & Technology B 39(2): 022202 (2021)

[87]. F Zhou, W Z Xu, F F Ren, D Zhou, D J Chen, R Zhang, Y D   Zheng, T G Zhu, and H Lu, “High-Voltage Quasi-Vertical GaN Junction Barrier   Schottky Diode With Fast Switching Characteristics”, IEEE Electron Device   Letters 42(7): 974-977 (2021)

[86]. W Z Xu, F Zhou, Q Liu, F F Ren, D Zhou, D Chen, R Zhang, Y D   Zheng, and H Lu, “1000-W Resistive Energy Dissipating Capability Against   Inductive Transients Demonstrated in Non-Avalanche AlGaN/GaN Schottky Diode”,   IEEE Electron Device Letters 42 (12):1743-1746 (2021)

[85]. K W Nie, W Z Xu, F F Ren, D Zhou, D F Pan, J D Ye, D J Chen,   R Zhang, Y D Zheng, H Lu, “Highly Enhanced Inductive Current Sustaining   Capability and Avalanche Ruggedness in GaN p-i-n Diodes With Shallow Bevel   Termination”, IEEE Electron Device Letters 41 (3): 469-472   (2020)   

[84]. Z Y Wang, D Zhou, W Z Xu, D F Pan, F F Ren, D J Chen, R   Zhang, Y D Zheng, H Lu, “High-Performance 4H-SiC Schottky Photodiode With   Semitransparent Grid-Electrode for EUV Detection”, IEEE Photonics Technology   Letters 32(13): 791-794 (2020)

[83]. H Dong, H Zhang, L L Su, D Zhou, W Z Xu, F F Ren, D J Chen,   R Zhang, Y D Zheng, H Lu, “After-Pulse Characterizations of Geiger-Mode   4H-SiC Avalanche Photodiodes”, IEEE Photonics Technology Letters 32(12):   706-709 (2020)

[82]. Y-T Shi, W-Z Xu, C-K Zeng, F-F Ren, J D Ye, D Zhou, D J   Chen, R Zhang, Y D Zheng, and H Lu, “High-k HfO2-Based AlGaN/GaN MIS-HEMTs   With Y2O3 Interfacial Layer for High Gate Controllability and Interface   Quality”, IEEE Journal of the Electron Devices Society 8(1): 15-19 (2020)

[81]. Y Lu, F Zhou, W Xu, D Wang, Y Xia, Y Zhu, D Pan, F F Ren, D   Zhou, J Ye, D Chen, R Zhang, Y Zheng, and H Lu, “Multi-aperture anode based   AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high   uniformity”, Applied Physics Express 13, 096502 (2020)

[80]. L Cheng, W Xu, D Pan, H Liang, R Wang, Y Zhu, F F Ren, D   Zhou, J Ye, D Chen, R Zhang, Y Zheng, and H Lu, “Gate-first AlGaN/GaN HEMT   Technology for Enhanced Threshold Voltage Stability Based on MOCVD-grown in   situ SiNx”, Journal of Physics D: Applied Physics (2020)

[79]. B Liu, D J Chen, H Lu, T Tao, Z Zhuang, Z G Shao, W Z Xu, H   X Ge, T Zhi, F F Ren, J D Ye, Z L Xie, R Zhang, “Hybrid Light Emitters and UV   Solar‐Blind Avalanche Photodiodes based on III‐Nitride Semiconductors”,   Advanced Materials 1904354 (2020)

[78]. L L Su, D Zhou, Q Liu, F F Ren, D J Chen, R Zhang, Y D   Zheng, H Lu, “Effect of a Single Threading Dislocation on Electrical and   Single Photon Detection Characteristics of 4H-SiC Ultraviolet Avalanche   Photodiodes”, Chinese Physics Letters 37(6): 068502 (2020)

[77]. Q Liu, D Zhou, X Cai, M Qi, W Xu, D Chen, F F Ren, R Zhang,   Y D Zheng, H Lu, “Effect of very high-fluence proton radiation on 6H-SiC   photoconductive proton detectors”, IEEE Electron Device Letters 40 (12): 1929   (2019)   

[76]. W-Z Xu, Y-T Shi, F-F Ren, D Zhou, LL Su, Q Liu, L Cheng, J   Ye, D J Chen, R Zhang, Y Zheng, H Lu, “Magnesium ion-implantation-based   gallium nitride p-i-n photodiode for visible-blind ultraviolet detection”,   Photonics Research 7(8): B48-B54 (2019)

[75]. Y-T Shi, F-F Ren, W-Z Xu, X Chen, J Ye, L Li, D Zhou, R   Zhang, Y Zheng, H H Tan, C Jagadish, and H Lu, “Realization of p-type gallium   nitride by magnesium ion implantation for vertical power devices”, Scientific   Reports 9: 8796 (2019)

[74]. L L Su, X L Cai, H Lu, D Zhou, WZ Xu, DJ Chen, FF Ren, R   Zhang, YD Zheng, GL Li, “Spatial Non-Uniform Hot Carrier Luminescence From   4H-SiC p-i-n Avalanche Photodiodes”, IEEE Photonics Technology Letters 31(6):   447– 450 (2019)

[73]. C K Zeng, W Z Xu, YY Xia, D F Pan, YW Wang, Q Wang, YH Zhu,   F F Ren, D Zhou, J D Ye, D J Chen, R Zhang, YD Zheng, H Lu, “Investigations   of the gate instability characteristics in Schottky/ohmic type p-GaN gate   normally-off AlGaN/GaN HEMTs”, Applied Physics Express 12 (12): 121005   (2019) 

[72]. L Cheng, W-Z Xu, D F Pan, Y H Zhu, F-F Ren, D Zhou, JD Ye, D   J Chen, R Zhang, Y Zheng, H Lu, “Gate-first process compatible, high-quality   in situ SiNx for surface passivation and gate dielectrics in AlGaN/GaN   MISHEMTs”, Journal of Physics D-Applied Physics 52(30): 305105 (2019)

[71]. D Zhang, C F Wu, W Z Xu, F F Ren, D Zhou, P Yu, R Zhang, Y D   Zheng, H Lu, “Investigation and active suppression of self-heating induced   degradation in amorphous InGaZnO thin film transistors”, Chinese Physics B 28   (1): 017303 (2019) 

[70]. X L Cai, D Zhou, L Cheng, F F Ren, H Zhong, R Zhang, YD   Zheng, and H Lu, “Performance improvement of 4H-SiC PIN ultraviolet avalanche   photodiodes with different intrinsic layer thicknesses”, Chinese Physics B 28   (9): 098503 (2019)

[69]. W Z Xu, F F Ren, D Jevtics, A Hurtado, L Li, Q Gao, J Ye, F   Wang, B Guilhabert, L Fu, H Lu, R Zhang, H H Tan, M D Dawson, and C Jagadish,   “Vertically emitting indium phosphide nanowire lasers”, Nano Letters, 18 (6),   3414–3420 (2018) 

[68]. X L Cai, L H Li, H Lu, D Zhou, W Z Xu, D J Chen, F F Ren, R   Zhang, Y D Zheng, and G L Li, “Vertical 4H-SiC n-i-p-n APDs with partial   trench isolation”, IEEE Photonics Technology Letters 30 (9): 805-808   (2018) 

[67]. W Liu, W Xu, D Zhou, F F Ren, D Chen, P Yu, R Zhang, Y   Zheng, H Lu, “Avalanche ruggedness of GaN p-i-n diodes grown on sapphire   substrate”, Phys Status Solidi A 215: 1800069 (2018) 

[66]. W-Z Xu, Y-T Shi, F-F Ren, J D Ye, I V Shadrivov, H Lu, L J   Liang, X P Hu, B B Jin, R Zhang, Y D Zheng, H H Tan, and C Jagadish, “A   terahertz controlled-NOT gate based on asymmetric rotation of polarization in   chiral metamaterials”, Advanced Optical Materials, 5 (18): 1700108   (2017) 

[65]. S Yang, D Zhou, W Z Xu, X L Cai, H Lu, D J Chen, F-F Ren, R   Zhang, and Y D Zheng, “4H-SiC ultraviolet avalanche photodiodes with small   gain slope and enhanced fill factor”, IEEE Photonics Journal 9(2): 6801508   (2017)

[64]. S Yang, D Zhou, X Cai, W Xu, H Lu, D Chen, F F Ren, R Zhang,   Y D Zheng, and R Wang, “Analysis of dark count mechanisms of 4H-SiC   ultraviolet avalanche photodiodes working in Geiger mode”, IEEE Transactions   on Electron Devices 64(11): 4532-4539 (2017)

[63]. X L Cai, C F Wu, H Lu, Y F Chen, D Zhou, F Liu, S Yang, D J   Chen, F F Ren, R Zhang, and Y D Zheng, “Single photon counting spatial   uniformity of 4H-SiC APD characterized by SNOM-based mapping system”, IEEE   Photonics Technology Letters 29(19): 1603-1606 (2017)

[62]. L Li, D Zhou, H Lu, W Liu, X Mo, F F Ren, D Chen, R Wang, G   Li, R Zhang, and Y D Zheng, “4H–SiC avalanche photodiode linear array   operating in Geiger mode”, IEEE Photonics Journal 9 (5), 6804207 (2017) 

[61]. X F Mo, W-Z Xu, H Lu, D Zhou, F-F Ren, D-J Chen, R Zhang,   and Y-D Zheng, “Fabrication and characterization of a GaN-based 320×256   micro-LED array”, Chinese Physics Letters 34 (11), 118102 (2017)  

[60]. W Z Xu, F-F Ren, J D Ye, H Lu, L Liang, X M Huang, M K Liu,   I V Shadrivov, D A Powell, G Yu, B B Jin, R Zhang, Y D Zheng, H H Tan, and C   Jagadish, “Electrically tunable terahertz metamaterials with embedded   large-area transparent thin film transistor arrays” Scientific Reports 6:   23486 (2016)   

[59]. S Yang, D Zhou, H Lu, D J Chen, F-F Ren, R Zhang, Y D Zheng,   “4H-SiC p-i-n Ultraviolet Avalanche Photodiodes Obtained by Al implantation”   IEEE Photonics Technology Letters 28(11):1185-1188 (2016)

[58]. S Yang, D Zhou, H Lu, D J Chen, F F Ren, R Zhang, Y D Zheng,   “High-performance 4H-SiC p-i-n Ultraviolet Photodiode with p Layer Formed by   Al implantation” IEEE Photonics Technology Letters 28(11): 1189-1192 (2016)

[57]. L H Li, D Zhou, F Liu, H Lu, F F Ren, D J Chen, R Zhang, Y D   Zheng, “High Fill-Factor 4H-SiC Avalanche Photodiodes With Partial Trench   Isolation”, IEEE Photonics Technology Letters 28(22): 2526-2528 (2016)

[56]. X L Cai, D Zhou, S Yang, H Lu, D Chen, F F Ren, R Zhang, Y D   Zheng, “4H-SiC SACM Avalanche Photodiode With Low Breakdown Voltage and High   UV Detection Efficiency”, IEEE Photonics Journal, 8(5):1-7 (2016) 

[55]. G G Zhang, X Guo, F-F Ren, Y Li, B Liu, J D Ye, H X Ge, Z L   Xie, R Zhang, H H Tan, and C Jagadish, “High-brightness polarized green   InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating”, ACS   Photonics, 3(10):1912-1918 (2016)  

[54]. H M Qian, C F Wu, H Lu, W Z Xu, D Zhou, F F Ren, D J Chen, R   Zhang, Y D Zheng, “Bias stress instability involving subgap state transitions   in a-IGZO Schottky barrier diodes”, Journal of Physics D-Applied Physics   49(39): 395104 (2016) 

[53]. Y F Chen, H Lu, D J Chen, F F Ren, R Zhang, Y D Zheng,   “High-voltage photoconductive semiconductor switches fabricated on   semi-insulating HVPE GaN: Fe template”, Physica Status Solidi C: Current   Topics in Solid State Physics, 13(5-6): 374-377 (2016)   

[52]. C F Wu, Y F Chen, H Lu, X M Huang, F F Ren, D J Chen, R   Zhang, Y D Zheng, “Contact resistance asymmetry of amorphous   indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe   microscopy”, Chinese Physics B 25(5): 057306 (2016) 

[51]. L F Tang, H Lu, F-F Ren, D Zhou, R Zhang, Y D Zheng, X M   Huang, “Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide   Thin-Film Transistors under Ultraviolet Illumination”, Chinese Physics   Letters 33(3): 038502 (2016) 

[50]. G G Zhang, Z Y Li, X M Yuan, F Wang, L Fu, Z Zhuang, F-F   Ren, B Liu, R Zhang, H H Tan, C Jagadish, “Single nanowire green InGaN/GaN   light emitting diodes”, Nanotechnology 27(43): 435205 (2016)  

[49]. F F Ren, W Z Xu, H Lu, J D Ye, H H Tan, and C Jagadish,   “Dynamic control of THz waves through thin-film transistor metamaterials”,   Micro+Nano Materials, Devices, and Systems, Proceedings of SPIE 9668: 96680O   (2015)  

[48]. G G Zhang, Z Zhuang, X Guo, F-F Ren, B Liu, H X Ge, Z L Xie,   L Sun, T Zhi, T Tao, Y Li, Y D Zheng, and R Zhang, “Bloch surface plasmon   enhanced blue emission from InGaN/GaN light-emitting diode structures with   Al-coated GaN nanorods”, Nanotechnology 26(12): 125201 (2015)  

[47]. C F Wu, X M Huang, H Lu, G Yu, F-F Ren, DJ Chen, R Zhang, YD   Zheng, “Study on interface characteristics in amorphous indium-gallium-zinc   oxide thin-film transistors by using low-frequency noise and temperature   dependent mobility measurements”, Solid-State Electronics 109: 37-41   (2015)  

[46]. H J Ren, Q G Du, F-F Ren, and C E PNG, “Photonic   quasicrystal nanopatterned silicon thin film for photovoltaic applications”,   Journal of Optics 17: 035901 (2015)   

[45]. Y F Chen, H Lu, DJ Chen, F F Ren, D Zhou, R Zhang, YD Zheng   “Demonstration of an AlGaN-based solar-blind high-voltage photoconductive   switch”, Journal of Vacuum Science & Technology B, 33(4): 040601 (2015)

[44]. Y S Xu, D Zhou, H Lu, D J Chen, F F Ren, R Zhang, YD Zheng,   “High-temperature and reliability performance of 4H-SiC Schottky-barrier   photodiodes for UV detection”, Journal of Vacuum Science & Technology B,   33(4): 040602 (2015)

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[1].  X Z Du, Hai Lu, D J Chen, X Q Xiu, R Zhang,   Y D Zheng, “UV light-emitting diodes at 340 nm fabricated on a bulk GaN   substrate”, Chinese Physics Letters 27, 088105 (2010)