[130]. J Z Zhao, W Z Xu, et al.,"4H-SiC-Based Low-Noise Front-End Charge Coupling Transistor for 0.9% Radiation Energy Resolution", IEEE Transactions on Electron Devices ,72(7): 3915-3919 (2025)
[129]. C Zou,T Li et al., "Investigation of electrical performance degradation and trap states in depletion-mode metal-insulator semiconductor (MIS) GaN HEMTs under heavy ion irradiation", 6th International Conference on Radiation Effects of Electronic Devices, 1-4 (2025)
[128]. Y Zhou,T Li et al., "Dynamic overvoltage and energy loss in p-GaN HEMTs under ultraviolet pulsed laser-induced single event irradiation", Proceedings of the 37th lnternational Symposium on Power Semiconductor Devices & lCs, Kumamoto,285-288 (2025)
[127]. Y F Wang, H. Du, P. Yang, W. Xu, D. Zhou, F. Ren, D. Chen, R. Zhang, Y. Zheng and H. Lu, “4H-SiC Position-sensitive Detector Working in Extreme Ultraviolet Wavelength Band,” IEEE Electron Device Letters 46(2): 243-246 (2025)
[126]. Q Wei, F Zhou, T Ma, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu, "058 mΩ⋅cm²/523 V GaN Vertical Schottky Barrier Diode With 156 kA/cm² Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation", IEEE Electron Device Letters 45(6): 964-967 (2024)
[125].Y F Wang, P. Yang, H. Du, W. Xu, D. Zhou, F. Ren, D. Chen, R. Zhang, Y. Zheng and H. Lu, “4H-SiC Tetra-lateral Position Sensitive Detector for Ultraviolet Measurements,” IEEE Transactions on Electron Devices 71(8): 4829-4833 (2024)
[124]. Y F Wang, H. Du, P. Yang,W. Xu, D. Zhou, F. Ren, D. Chen, R. Zhang, Y. Zheng and H. Lu, “Over 98% Linearity 4H-SiC UV Pin-cushion Position-sensitive Detector Fabricated by Selective area Ion Implantation,” IEEE Electron Device Letters, 45(12):2447-2450 (2024)
[123]. Y Zhou,T Li et al., "High detection efficiency 4H-SiC avalanche photodiode with off-center top electrode structure",IEEE Photon. Technol. Lett.,37(5):261-264 (2025)
[122]. T Y Zhou, F Zhou, Q Y Chen, X F Lu, W Z Xu, D Zhou, F F Ren, D J Chen,Y Y Xia, L K Wu, K Wang, Y H Li, T G Zhu, R Zhang, Y D Zheng, and H Lu, "Normally-off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness", 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2024)
[121]. F Zhou, W Qi, T Ma, C Zou, J F Qian, W Z Xu, Y W Wang, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu, "Investigation of Trap States and Reverse Leakage in Fully-Vertical GaN Schottky Barrier Diodes with Laser Lift-Off Substrate", 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (2024)
[120]. F Zhou, L H Mo, Z L Hu, Q Z Yu, Can Zou, W Z Xu, F F Ren, D Zhou, D J Chen, Y D Zheng, R Zhang, and H Lu, "15-kV AlGaN/GaN MIS-HEMT with 3-D Stacking Pad-Connected Schottky Structure Demonstrating Radiation Robustness Against Atmospheric Neutrons", IEEE Electron Device Letters: 1-1 (2024)
[119]. F Zhou, C Zou, T Y Zhou, W Z Xu, F F Ren, D Zhou, Y W Wang, D J Chen, Y Y Xia, L K Wu, K Wang, Y H Li, T G Zhu, Y D Zheng, R Zhang, and H Lu, "Irradiation Hardened p-GaN HEMTs Enabling 558 V Single-Event Hardness at 757 MeV·cm2/mg and 95% Conversion Efficiency at 300 W/500 kHz", IEEE Electron Device Letters 45(6):976-979 (2024)
[118]. Q Wei, F Zhou, T Ma, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu, "058 mΩ⋅cm²/523 V GaN Vertical Schottky Barrier Diode With 156 kA/cm² Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation", IEEE Electron Device Letters 45(6): 964-967 (2024)
[117]. L J Guo, F Zhou, W Z Xu, F F Ren, D Zhou, D J Chen, R Zhang, Y D Zheng, and H Lu, “Insights into Dynamic Switching Behavior and Electric Field Distribution of Depletion-Mode GaN HEMT with Bonding Pad Over Active Layout”, Semiconductor Science and Technology 39(4): 045011 (2024)
[116]. Y F Wang, Z Y Wang, W Z Xu, F Zhou, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu, “High-performance 4H-SiC EUV Photodiode with Lateral p-n Junction Fabricated by Selective-area Ion Implantation”, IEEE Electron Device Letters 45(5): 857-860 (2024)
[115]. Y F Wang, W X Li, W Z Xu, F Zhou, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu, “Reach-Through-Collector Based 4H-SiC Phototransistor Enabling nW/cm2 UV Detection,” IEEE Electron Device Letters 45(4): 617-620 (2024)
[114]. J H Zhang, Z S Liu, J D Ye, W Z Xu, F Zhou, D Zhou, R Zhang, F F Ren, and H Lu, "Real-Time Terahertz Modulation Using Gold-MoS2 Metasurface with Electromagnetically Induced Transparency-Like Resonance", IEEE Photonics Journal 16(3): 1-5 (2024)
[113]. T Y Li, Y Zhou, X Q Tao, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu, "Study of Gain Spatial Nonuniformity in n-on-p and p-on-n 4H-SiC Avalanche Photodiodes", IEEE Photonics Technology Letters 36(7): 465-468 (2024)
[112]. Z S Liu, J H Zhang, J D Ye, Y T Shi, J Fu, Y W Wang, W Z Xu, D Zhou, F Zhou, R Zhang, H Lu, and F F Ren, "Improving AlGaN-based deep-ultraviolet light-emitting diodes: SiO2 passivation and size optimization for enhanced optoelectronic performance", Applied Physics Letters 124(16):161112 (2024)
[111]. Y Q Wei, W Z Xu, H Qu, R J Xu, J Z Zhao, D Zhou, F Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu, "GaN-Based Low-Energy X-Ray Single Photon Decetor With Photon Energy Resolution and Fast Response", IEEE Photonics Technology Letters 36(2): 123-126 (2024)
[110]. H Y Du, W X Li, Y F Wang, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu, "A Pulsed Ultraviolet Laser Positioning System Based on 4H-SiC Four-Quadrant Photodetectors", IEEE Photonics Technology Letters 36(11): 697-700 (2024)
[109]. X Q Tao, T Y Li, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu, "Dark Count Analysis in 4H-SiC Based UV Avalanche Photodiodes with Effective After-Pulse Suppression", IEEE Photonics Technology Letters 36(9): 585-588 (2024)
[108]. P C Yang, Y F Wang, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H, Lu, “Ultraviolet Spot Position Measurement Based on 4H-SiC Quadrant Photodetectors”, Chinese Optics Letters 22(11) (2024)
[107]. F Zhou, W Z Xu, Y L Jin, T Y Zhou, F F Ren, D Zhou, Y Y Xia, L K Wu, Y H Li, T G Zhu, D J Chen, R Zhang, Y D Zheng, and H Lu, "30-V-Threshold-Voltage p-GaN HEMTs with Low-Loss Reverse Conduction capability", 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD): 370-373 (2023)
[106]. F Zhou, H H Gong, M Xiao, Y W Ma, Z P Wang, X X Yu, L Li, L Fu, H H Tan, Y Yang, F F Ren, S L Gu, Y D Zheng, H Lu, R Zhang, Y H Zhang, and J D Ye, "An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics", Nature Communications 14(1): 1-10 (2023)
[105]. W X Li, Y F Wang, G Y Gu, F F Ren, D Zhou, W Z Xu, D J Chen, R Zhang, Y D Zheng, and H Lu, "Polarization-Assisted AlGaN Heterostructure-Based Solar-Blind Ultraviolet MSM Photodetectors with Enhanced Performance", IEEE Transactions on Electron Devices 70(7): 3468-3474 (2023)
[104]. T Y Li, X Q Tao, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu, "Geiger-Mode Operation 4H-SiC Recessed-Window Avalanche Photodiodes Fabricated by N Ion Implantation", IEEE Photonics Technology Letters 35(14): 761-764 (2023)
[103]. Y L Jin, F Zhou, W Z Xu, Z P Wang, T Y Zhou, D Zhou, F F Ren, Y Y Xia, L K Wu, Y H Li, T G Zhu, D J Chen, R Zhang, J D Ye, Y D Zheng, and H Lu, "High-VTH E-Mode GaN HEMTs with Robust Gate-Bias-Dependent VTH Stability Enabled by Mg-Doped p-GaN Engineering", IEEE Transactions on Electron Devices 70(11): 5596-5602 (2023)
[102]. Z S Liu, X X Yu, J H Zhang, X H Liu, J D Ye, F F Ren, Y W Wang, W Z Xu, D Zhou, R Zhang, Y D Zheng, and H Lu, “Enhanced light output from deep ultraviolet light-emitting diodes enabled by high-order modes on a photonic crystal surface”, Optics Letters 48(2):247-250 (2023)
[101]. X H Liu, F F Ren, Z P Wang, X Y Sun, Q S Yang, Y W Wang, J D Ye, X F Chen, W Z Xu, D Zhou, X G Xu, R Zhang, and H Lu, “Dynamic reactions of defects in ion-implanted 4H-SiC upon high temperature annealing”, Journal of Physics D-Applied Physics 56(23):235102 (2023)
[100]. L J Guo, W Z Xu, Q Wei, X H Liu, T Y Li, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu, “Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage”, Chinese Physics B 32(2): 027302 (2023)
[99]. Y F Wang, W X Li, D Zhou, W Z Xu, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu, “Performance Analysis of a 4H-SiC n-p-n Phototransistor With Floating Base for Ultraviolet Light Detection”, IEEE Transactions on Electron Devices 70(1):159-166 (2023)
[98]. Q S Yang, Q Liu, L J Guo, S C Hao, D Zhou, W Z Xu, B Q Zhang, F Yang, F F Ren, D J Chen, R Zhang, Y D Zheng, and H Lu, “High Resolution 4H-SiC p-i-n Radiation Detectors with Low-Voltage Operation”, IEEE Electron Device Letters 43(12):2161-2164 (2022)
[97]. Y H Du, W Z Xu, H H Gong, J D Ye, F Zhou, F F Ren, D Zhou, D J Chen, R Zhang, Y D Zheng, and H Lu, “Current transport dynamics and stability characteristics of the NiOx based gate structure for normally-off GaN HEMTs”, Journal of Physics D-Applied Physics 55(47):474001 (2022)
[96]. X H Liu, F F Ren, J D Ye, S X Wang, W Z Xu, D Zhou, M B Yu, R Zhang, Y D Zheng, and H Lu, “Enhanced single photon emission in silicon carbide with Bull's eye cavities”, Chinese Physics B 31(10):104206 (2022)
[95]. Z F Li, D Zhou, W Z Xu, F F Ren, R Zhang, Y D Zheng, and H Lu, “Demonstration of a Solar-Blind Single-Photon Imaging Lidar Based on SiC Ultraviolet Avalanche Photodiodes”, IEEE Photonics Technology Letters 34(17): 935-938 (2022)
[94]. F Zhou, W Z Xu, Y L Jin, T Y Zhou, F F Ren, D Zhou, D N Chen, R Zhang, Y D Zheng, and H Lu, “Flip-Chip AlGaN/GaN Schottky Barrier Diode Using Buried-Ohmic Anode Structure With Robust Surge Current Ruggedness and Transient Energy Sustaining Capability”, IEEE Transactions on Electron Devices 69(10):5664-5670 (2022)
[93]. Q Wei, F Zhou, W Z Xu, F F Ren, D Zhou, D J Chen, R Zhang, Y D Zheng, and H Lu, “Demonstration of Vertical GaN Schottky Barrier Diode With Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques”, IEEE Journal of the Electron Devices Society 10:1003-1008 (2022)
[92]. F Zhou, W Z Xu, F F Ren, Y Y Xia, L K Wu, T G Zhu, D J Chen, R Zhang, Y D Zheng, and H Lu, “12 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability”, IEEE Transactions on Power Electronics 37(1):26-30 (2022)
[91]. C K Zeng, W Z Xu, Y Y Xia, K Wang, F F Ren, D Zhou, Y H Li, T G Zhu, D J Chen, R Zhang, Y D Zheng, and H Lu, “Normally-off GaN HEMTs with InGaN p-gate cap layer formed by polarization doping”, Applied Physics Express 15(1):016502 (2022)
[90]. F Zhou, W Z Xu, F F Ren, D Zhou, D J Chen, R Zhang, Y D Zheng, T G Zhu, and H Lu, “Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode With 600-V/10-A Switching Capability”, IEEE Transactions on Power Electronics 36(11): 12163-12167 (2021)
[89]. F Zhou, H H Gong, Z P Wang, W Z Xu, X X Yu, Y Yang, F F Ren, S L Gu, R Zhang, Y D Zheng, H Lu, and J D Ye, “Over 18 GW/cm2 beveled-mesa NiO/beta-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability”, Applied Physics Letters 119(26):262103 (2021)
[88]. Q Liu, D Zhou, W Z Xu, D J Chen, F F Ren, R Zhang, Y D Zheng, and H Lu, “High sensitivity x-ray detectors based on 4H-SiC p-i-n structure with 80 mu m thick intrinsic layer”, Journal of Vacuum Science & Technology B 39(2): 022202 (2021)
[87]. F Zhou, W Z Xu, F F Ren, D Zhou, D J Chen, R Zhang, Y D Zheng, T G Zhu, and H Lu, “High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode With Fast Switching Characteristics”, IEEE Electron Device Letters 42(7): 974-977 (2021)
[86]. W Z Xu, F Zhou, Q Liu, F F Ren, D Zhou, D Chen, R Zhang, Y D Zheng, and H Lu, “1000-W Resistive Energy Dissipating Capability Against Inductive Transients Demonstrated in Non-Avalanche AlGaN/GaN Schottky Diode”, IEEE Electron Device Letters 42 (12):1743-1746 (2021)
[85]. K W Nie, W Z Xu, F F Ren, D Zhou, D F Pan, J D Ye, D J Chen, R Zhang, Y D Zheng, H Lu, “Highly Enhanced Inductive Current Sustaining Capability and Avalanche Ruggedness in GaN p-i-n Diodes With Shallow Bevel Termination”, IEEE Electron Device Letters 41 (3): 469-472 (2020)
[84]. Z Y Wang, D Zhou, W Z Xu, D F Pan, F F Ren, D J Chen, R Zhang, Y D Zheng, H Lu, “High-Performance 4H-SiC Schottky Photodiode With Semitransparent Grid-Electrode for EUV Detection”, IEEE Photonics Technology Letters 32(13): 791-794 (2020)
[83]. H Dong, H Zhang, L L Su, D Zhou, W Z Xu, F F Ren, D J Chen, R Zhang, Y D Zheng, H Lu, “After-Pulse Characterizations of Geiger-Mode 4H-SiC Avalanche Photodiodes”, IEEE Photonics Technology Letters 32(12): 706-709 (2020)
[82]. Y-T Shi, W-Z Xu, C-K Zeng, F-F Ren, J D Ye, D Zhou, D J Chen, R Zhang, Y D Zheng, and H Lu, “High-k HfO2-Based AlGaN/GaN MIS-HEMTs With Y2O3 Interfacial Layer for High Gate Controllability and Interface Quality”, IEEE Journal of the Electron Devices Society 8(1): 15-19 (2020)
[81]. Y Lu, F Zhou, W Xu, D Wang, Y Xia, Y Zhu, D Pan, F F Ren, D Zhou, J Ye, D Chen, R Zhang, Y Zheng, and H Lu, “Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity”, Applied Physics Express 13, 096502 (2020)
[80]. L Cheng, W Xu, D Pan, H Liang, R Wang, Y Zhu, F F Ren, D Zhou, J Ye, D Chen, R Zhang, Y Zheng, and H Lu, “Gate-first AlGaN/GaN HEMT Technology for Enhanced Threshold Voltage Stability Based on MOCVD-grown in situ SiNx”, Journal of Physics D: Applied Physics (2020)
[79]. B Liu, D J Chen, H Lu, T Tao, Z Zhuang, Z G Shao, W Z Xu, H X Ge, T Zhi, F F Ren, J D Ye, Z L Xie, R Zhang, “Hybrid Light Emitters and UV Solar‐Blind Avalanche Photodiodes based on III‐Nitride Semiconductors”, Advanced Materials 1904354 (2020)
[78]. L L Su, D Zhou, Q Liu, F F Ren, D J Chen, R Zhang, Y D Zheng, H Lu, “Effect of a Single Threading Dislocation on Electrical and Single Photon Detection Characteristics of 4H-SiC Ultraviolet Avalanche Photodiodes”, Chinese Physics Letters 37(6): 068502 (2020)
[77]. Q Liu, D Zhou, X Cai, M Qi, W Xu, D Chen, F F Ren, R Zhang, Y D Zheng, H Lu, “Effect of very high-fluence proton radiation on 6H-SiC photoconductive proton detectors”, IEEE Electron Device Letters 40 (12): 1929 (2019)
[76]. W-Z Xu, Y-T Shi, F-F Ren, D Zhou, LL Su, Q Liu, L Cheng, J Ye, D J Chen, R Zhang, Y Zheng, H Lu, “Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection”, Photonics Research 7(8): B48-B54 (2019)
[75]. Y-T Shi, F-F Ren, W-Z Xu, X Chen, J Ye, L Li, D Zhou, R Zhang, Y Zheng, H H Tan, C Jagadish, and H Lu, “Realization of p-type gallium nitride by magnesium ion implantation for vertical power devices”, Scientific Reports 9: 8796 (2019)
[74]. L L Su, X L Cai, H Lu, D Zhou, WZ Xu, DJ Chen, FF Ren, R Zhang, YD Zheng, GL Li, “Spatial Non-Uniform Hot Carrier Luminescence From 4H-SiC p-i-n Avalanche Photodiodes”, IEEE Photonics Technology Letters 31(6): 447– 450 (2019)
[73]. C K Zeng, W Z Xu, YY Xia, D F Pan, YW Wang, Q Wang, YH Zhu, F F Ren, D Zhou, J D Ye, D J Chen, R Zhang, YD Zheng, H Lu, “Investigations of the gate instability characteristics in Schottky/ohmic type p-GaN gate normally-off AlGaN/GaN HEMTs”, Applied Physics Express 12 (12): 121005 (2019)
[72]. L Cheng, W-Z Xu, D F Pan, Y H Zhu, F-F Ren, D Zhou, JD Ye, D J Chen, R Zhang, Y Zheng, H Lu, “Gate-first process compatible, high-quality in situ SiNx for surface passivation and gate dielectrics in AlGaN/GaN MISHEMTs”, Journal of Physics D-Applied Physics 52(30): 305105 (2019)
[71]. D Zhang, C F Wu, W Z Xu, F F Ren, D Zhou, P Yu, R Zhang, Y D Zheng, H Lu, “Investigation and active suppression of self-heating induced degradation in amorphous InGaZnO thin film transistors”, Chinese Physics B 28 (1): 017303 (2019)
[70]. X L Cai, D Zhou, L Cheng, F F Ren, H Zhong, R Zhang, YD Zheng, and H Lu, “Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses”, Chinese Physics B 28 (9): 098503 (2019)
[69]. W Z Xu, F F Ren, D Jevtics, A Hurtado, L Li, Q Gao, J Ye, F Wang, B Guilhabert, L Fu, H Lu, R Zhang, H H Tan, M D Dawson, and C Jagadish, “Vertically emitting indium phosphide nanowire lasers”, Nano Letters, 18 (6), 3414–3420 (2018)
[68]. X L Cai, L H Li, H Lu, D Zhou, W Z Xu, D J Chen, F F Ren, R Zhang, Y D Zheng, and G L Li, “Vertical 4H-SiC n-i-p-n APDs with partial trench isolation”, IEEE Photonics Technology Letters 30 (9): 805-808 (2018)
[67]. W Liu, W Xu, D Zhou, F F Ren, D Chen, P Yu, R Zhang, Y Zheng, H Lu, “Avalanche ruggedness of GaN p-i-n diodes grown on sapphire substrate”, Phys Status Solidi A 215: 1800069 (2018)
[66]. W-Z Xu, Y-T Shi, F-F Ren, J D Ye, I V Shadrivov, H Lu, L J Liang, X P Hu, B B Jin, R Zhang, Y D Zheng, H H Tan, and C Jagadish, “A terahertz controlled-NOT gate based on asymmetric rotation of polarization in chiral metamaterials”, Advanced Optical Materials, 5 (18): 1700108 (2017)
[65]. S Yang, D Zhou, W Z Xu, X L Cai, H Lu, D J Chen, F-F Ren, R Zhang, and Y D Zheng, “4H-SiC ultraviolet avalanche photodiodes with small gain slope and enhanced fill factor”, IEEE Photonics Journal 9(2): 6801508 (2017)
[64]. S Yang, D Zhou, X Cai, W Xu, H Lu, D Chen, F F Ren, R Zhang, Y D Zheng, and R Wang, “Analysis of dark count mechanisms of 4H-SiC ultraviolet avalanche photodiodes working in Geiger mode”, IEEE Transactions on Electron Devices 64(11): 4532-4539 (2017)
[63]. X L Cai, C F Wu, H Lu, Y F Chen, D Zhou, F Liu, S Yang, D J Chen, F F Ren, R Zhang, and Y D Zheng, “Single photon counting spatial uniformity of 4H-SiC APD characterized by SNOM-based mapping system”, IEEE Photonics Technology Letters 29(19): 1603-1606 (2017)
[62]. L Li, D Zhou, H Lu, W Liu, X Mo, F F Ren, D Chen, R Wang, G Li, R Zhang, and Y D Zheng, “4H–SiC avalanche photodiode linear array operating in Geiger mode”, IEEE Photonics Journal 9 (5), 6804207 (2017)
[61]. X F Mo, W-Z Xu, H Lu, D Zhou, F-F Ren, D-J Chen, R Zhang, and Y-D Zheng, “Fabrication and characterization of a GaN-based 320×256 micro-LED array”, Chinese Physics Letters 34 (11), 118102 (2017)
[60]. W Z Xu, F-F Ren, J D Ye, H Lu, L Liang, X M Huang, M K Liu, I V Shadrivov, D A Powell, G Yu, B B Jin, R Zhang, Y D Zheng, H H Tan, and C Jagadish, “Electrically tunable terahertz metamaterials with embedded large-area transparent thin film transistor arrays” Scientific Reports 6: 23486 (2016)
[59]. S Yang, D Zhou, H Lu, D J Chen, F-F Ren, R Zhang, Y D Zheng, “4H-SiC p-i-n Ultraviolet Avalanche Photodiodes Obtained by Al implantation” IEEE Photonics Technology Letters 28(11):1185-1188 (2016)
[58]. S Yang, D Zhou, H Lu, D J Chen, F F Ren, R Zhang, Y D Zheng, “High-performance 4H-SiC p-i-n Ultraviolet Photodiode with p Layer Formed by Al implantation” IEEE Photonics Technology Letters 28(11): 1189-1192 (2016)
[57]. L H Li, D Zhou, F Liu, H Lu, F F Ren, D J Chen, R Zhang, Y D Zheng, “High Fill-Factor 4H-SiC Avalanche Photodiodes With Partial Trench Isolation”, IEEE Photonics Technology Letters 28(22): 2526-2528 (2016)
[56]. X L Cai, D Zhou, S Yang, H Lu, D Chen, F F Ren, R Zhang, Y D Zheng, “4H-SiC SACM Avalanche Photodiode With Low Breakdown Voltage and High UV Detection Efficiency”, IEEE Photonics Journal, 8(5):1-7 (2016)
[55]. G G Zhang, X Guo, F-F Ren, Y Li, B Liu, J D Ye, H X Ge, Z L Xie, R Zhang, H H Tan, and C Jagadish, “High-brightness polarized green InGaN/GaN light-emitting diode structure with Al-coated p-GaN grating”, ACS Photonics, 3(10):1912-1918 (2016)
[54]. H M Qian, C F Wu, H Lu, W Z Xu, D Zhou, F F Ren, D J Chen, R Zhang, Y D Zheng, “Bias stress instability involving subgap state transitions in a-IGZO Schottky barrier diodes”, Journal of Physics D-Applied Physics 49(39): 395104 (2016)
[53]. Y F Chen, H Lu, D J Chen, F F Ren, R Zhang, Y D Zheng, “High-voltage photoconductive semiconductor switches fabricated on semi-insulating HVPE GaN: Fe template”, Physica Status Solidi C: Current Topics in Solid State Physics, 13(5-6): 374-377 (2016)
[52]. C F Wu, Y F Chen, H Lu, X M Huang, F F Ren, D J Chen, R Zhang, Y D Zheng, “Contact resistance asymmetry of amorphous indium-gallium-zinc-oxide thin-film transistors by scanning Kelvin probe microscopy”, Chinese Physics B 25(5): 057306 (2016)
[51]. L F Tang, H Lu, F-F Ren, D Zhou, R Zhang, Y D Zheng, X M Huang, “Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination”, Chinese Physics Letters 33(3): 038502 (2016)
[50]. G G Zhang, Z Y Li, X M Yuan, F Wang, L Fu, Z Zhuang, F-F Ren, B Liu, R Zhang, H H Tan, C Jagadish, “Single nanowire green InGaN/GaN light emitting diodes”, Nanotechnology 27(43): 435205 (2016)
[49]. F F Ren, W Z Xu, H Lu, J D Ye, H H Tan, and C Jagadish, “Dynamic control of THz waves through thin-film transistor metamaterials”, Micro+Nano Materials, Devices, and Systems, Proceedings of SPIE 9668: 96680O (2015)
[48]. G G Zhang, Z Zhuang, X Guo, F-F Ren, B Liu, H X Ge, Z L Xie, L Sun, T Zhi, T Tao, Y Li, Y D Zheng, and R Zhang, “Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods”, Nanotechnology 26(12): 125201 (2015)
[47]. C F Wu, X M Huang, H Lu, G Yu, F-F Ren, DJ Chen, R Zhang, YD Zheng, “Study on interface characteristics in amorphous indium-gallium-zinc oxide thin-film transistors by using low-frequency noise and temperature dependent mobility measurements”, Solid-State Electronics 109: 37-41 (2015)
[46]. H J Ren, Q G Du, F-F Ren, and C E PNG, “Photonic quasicrystal nanopatterned silicon thin film for photovoltaic applications”, Journal of Optics 17: 035901 (2015)
[45]. Y F Chen, H Lu, DJ Chen, F F Ren, D Zhou, R Zhang, YD Zheng “Demonstration of an AlGaN-based solar-blind high-voltage photoconductive switch”, Journal of Vacuum Science & Technology B, 33(4): 040601 (2015)
[44]. Y S Xu, D Zhou, H Lu, D J Chen, F F Ren, R Zhang, YD Zheng, “High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection”, Journal of Vacuum Science & Technology B, 33(4): 040602 (2015)
[43]. F Liu, D Zhou, H Lu, D J Chen, F-F Ren, R Zhang, Y D Zheng, “Passive Quenching Electronics for Geiger Mode 4H-SiC Avalanche Photodiodes”, Chinese Physics Letters 32(12): 128501 (2015)
[42]. H M Qian, G Yu, H Lu, C F Wu, L F Tang, D Zhou, F-F Ren, R Zhang, Y L Zheng, and X M Huang, “Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors”, Chinese Physics B 24(7): 077307 (2015)
[41]. X M Huang, CF Wu, H Lu, F-F Ren, H B Zhu, YJ Wang, “The Effect of Oxygen Partial Pressure during Active Layer Deposition on Bias Stability of a-InGaZnO TFTs”, Chinese Physics Letters 32(7): 077303 (2015)
[40]. G Yu, C F Wu, H Lu, F-F Ren, R Zhang, Y D Zheng, X M Huang, “Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors”, Chinese Physics Letters 32(4): 047302 (2015)
[39]. F F Ren, W Z Xu, J D Ye, K W Ang, H Lu, R Zhang, M B Yu, G Q Lo, H H Tan, and C Jagadish, “Second-order surface-plasmon assisted responsivity enhancement in germanium nano-photodetectors with bull’s eye antennas”, Optics Express 22(13): 15949-15956 (2014)
[38]. X M Huang, C F Wu, H Lu, F F Ren, D J Chen, Y L Liu, G Yu, R Zhang, Y D Zheng, and Y J Wang, “Large-swing a-IGZO inverter with a depletion load induced by laser annealing”, IEEE Electron Device Letters 35(10): 1034-1036 (2014)
[37]. D Zhou, F Liu, H Lu, D J Chen, F F Ren, R Zhang, and Y D Zheng, “High-Temperature Single Photon Detection Performance of 4H-SiC Avalanche Photodiodes”, IEEE Photonics Technology Letters 26 (11), 1136-1138 (2014)
[36]. Y F Chen, H Lu, G S Wang, D J Chen, F F Ren, R Zhang, Y, D, Zheng, “Metal-semiconductor-metal ultraviolet photodetectors directly fabricated on semi-insulating GaN: Fe template grown by hydride vapor phase epitaxy”, Sensors and Actuators A-Physical 216: 308–311 (2014)
[35]. T J Wang, W-Z Xu, H Lu, F-F Ren, D-J Chen, R Zhang, and Y-D Zheng, “Solar-blind ultraviolet band-pass filter based on metal-dielectric multilayer structures”, Chinese Physics B 23(7): 074201 (2014)
[34]. W Z Xu, L H Fu, H Lu, D J Chen, F F Ren, R Zhang, Y D Zheng, K Wei, X Y Liu, “Off-state Breakdown and Leakage Current Transport Analysis of AlGaN/GaN High Electron Mobility Transistors”, Microelectronics Reliability 54(11): 2406-2409 (2014)
[33]. C Jiang, H Lu, D J Chen, F-F Ren, R Zhang, Y, D, Zheng, “Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate”, Chinese Physics B 23(9): 097308 (2014)
[32]. F F Ren, J D Ye, H Lu, R Zhang, and YD Zheng, “Spectrum broadening of high-efficiency second harmonic generation in cascaded photonic crystal microcavities”, Optics Express 21(1): 756-763 (2013)
[31]. X M Huang, C F Wu, H Lu, F-F Ren, D-J Chen, R Zhang, and Y D Zheng, “Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer”, Applied Physics Letters 102(19): 193505 (2013)
[30]. X M Huang, C F Wu, H Lu, F F Ren, D-J Chen, R Zhang, Y D Zheng, and Q Y Xu, “Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium-gallium-zinc oxide thin film transistors”, Solid-State Electronics 86: 41-44 (2013)
[29]. G S Wang, H Lu, D-J Chen, F F Ren, R Zhang, and Y D Zheng, “High quantum efficiency GaN-based p-i-n ultraviolet photodetectors prepared on patterned sapphire substrates”, IEEE Photonics Technology Letters 25(7): 652-654 (2013)
[28]. R Jiang, H Lu, D-J Chen, F-F Ren, D-W Yan, R Zhang, and Y-D Zheng, “Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes”, Chinese Physics B 22(4): 047805 (2013)
[27]. D Zhou, H Lu, D-J Chen, F-F Ren, R Zhang, Y-D Zheng, and L Li, “Vacuum violet photo-response of AlGaN-based metal-semiconductor-metal photodetectors”, Chinese Physics Letters 30(11):117301 (2013)
[26]. W Z Xu, L H Fu, H Lu, F-F Ren, D-J Chen, R Zhang, and Y D Zheng, “GaN Schottky barrier diodes with high-resistivity edge termination formed by boron implantation”, Chinese Physics Letters 30(5): 057303 (2013)
[25]. H F Lian, G-S Wang, H Lu, F-F Ren, D-J Chen, R Zhang, and Y D Zheng, “High deep-ultraviolet quantum efficiency GaN p-i-n photodetectors with thin p-GaN contact layer”, Chinese Physics Letters 30(1): 017302 (2013)
[24]. X M Huang, C F Wu, H Lu, F-F Ren, Q Y Xu, H L Ou, R Zhang, and Y D Zheng, “Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination”, Applied Physics Letters 100(24): 243505 (2012)
[23]. F Xie, Hai Lu, D J Chen, F F Ren, R Zhang, and Y D Zheng, “Bias-selective dual-operation-mode ultraviolet Schottky-barrier photodetectors fabricated on high-resistivity homoepitaxial GaN”, IEEE Photonics Technology Letters 24(24) 2203-2205 (2012)
[22]. G S Wang, H Lu, F Xie, D-J Chen, F-F Ren, R Zhang, and Y D Zheng, “High quantum efficiency back-illuminated AlGaN-based solar-blind ultraviolet p-i-n photodetectors”, Chinese Physics Letters 29(9): 097302 (2012)
[21]. F Xie, H Lu, D J Chen, Member, IEEE, X L Ji, F Yan, R Zhang, Y D Zheng, L Li, and J J Zhou, “Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications”, IEEE Sensors Journal 12, 2086 (2012)
[20]. D W Yan, H Lu, D J Chen, R Zhang, Y D Zheng, X Qian, A D Li, “Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface”, Solid-State Electronics, 72, 56-59 (2012)
[19]. X M Huang, C F Wu, H Lu, Q Y Xu, R Zhang, Y D Zheng, “Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors”, Chinese Physics Letters 29, 067302 (2012)
[18]. F F Ren, K W Ang, J D Ye, M B Yu, G Q Lo, and D L Kwong, “Split bull’s eye shaped aluminum antenna for plasmon-enhanced nanometer scale germanium photodetector”, Nano Letters 11, 1289 (2011)
[17]. F Xie, H Lu, D J Chen, X Q Xiu, XQ, H Zhao, R Zhang, Y D Zheng, “Metal-Semiconductor-Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate”, IEEE Electron Device Lett 32, 1260 (2011)
[16]. F Xie, Hai Lu, D J Chen, P Han, R Zhang, Y D Zheng, L Li, W H Jiang, C Chen, “Large-area solar-blind AlGaN-based MSM photodetectors with ultra-low dark current”, Electronics Letters 47, 930 (2011)
[15]. Y Huang, D J Chen, Hai Lu, R Zhang, Y D Zheng, L Li, X Dong, Z H Li, C Chen, T S Chen, “Identifying Interface States in AlInN/GaN Heterostructure by Photocurrent Method”, IEEE Electron Device Lett 32, 1071 (2011)
[14]. F Xie, Hai Lu, D J Chen, P Han, R Zhang, Y D Zheng, L Li, W H Jiang, C Chen, “GaN MSM photodetectors fabricated on bulk GaN with low dark-current and high UV/visible rejection ratio”, Phys Status Solidi C 8, 2473 (2011)
[13]. D S Cao, Hai Lu, D J Chen, P Han, R Zhang, Y D Zheng, “1100V AlGaN/GaN-based planar Schottky barrier diode without edge termination”, Chinese Physics Letters 28, 017303 (2011)
[12]. R F Qiu, Hai Lu, D J Chen, R Zhang, Y D Zheng, “Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis”, Applied Surface Science 257, 2700 (2011)
[11]. F X Wang, Hai Lu, X Q Xiu, D J Chen, P Han, R Zhang, Y D Zheng, “Leakage current and sub-bandgap photo-response of oxygen-plasma treated GaN Schottky barrier diodes”, Applied Surface Science 257, 3948 (2011)
[10]. X J Shao, D W Yan, Hai Lu, D J Chen, R Zhang, Y D Zheng, “Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress”, Solid-State Electronics 57, 9 (2011)
[9]. F Xie, Hai Lu, X Q Xiu, D J Chen, P Han, R Zhang, Y D Zheng, “Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate”, Solid-State Electronics 57, 39-42 (2011)
[8]. L H Fu, Hai Lu, D J Chen, R Zhang, Y D Zheng, T S Chen, K Wei, X Y Liu, “Field-dependent carrier trapping induced kink effect in AlGaN/GaN high electron mobility transistors”, Appl Phys Lett 98, 173508 (2011)
[7]. Z G Shao, D J Chen, B Liu, Hai Lu, Z L Xie, R Zhang, Y D Zheng, “Current transport mechanisms of InGaN metal-insulator-semiconductor photodetectors” JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 29, 051201 (2011)
[6]. F F Ren, K W Ang, J F Song, Q Fang, M B Yu, G Q Lo, and D L Kwong, “Surface plasmon enhanced responsivity in a waveguided germanium metal-semiconductor-metal photodetector”, Appl Phys Lett 97, 091102 (2010)
[5]. D W Yan, Hai Lu, D S Cao, D J Chen, R Zhang, Y D Zheng, “On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors”, Appl Phys Lett 97, 153503 (2010)
[4]. Y Huang, D J Chen, Hai Lu, H B Shi, P Han, R Zhang, Y D Zheng YD, “Photocurrent characteristics of two-dimensional-electron-gas-based AlGaN/GaN metal-semiconductor-metal photodetectors”, Appl Phys Lett 96, 243503 (2010)
[3]. D W Yan, Hai Lu, D J Chen, R Zhang, Y D Zheng, “Forward tunneling current in GaN-based blue light-emitting diodes”, Appl Phys Lett 96, 083504 (2010)
[2]. F X Wang, Hai Lu, X Q Xiu, D J Chen, R Zhang, Y D Zheng, “Dislocation Clustering and Luminescence Nonuniformity in Bulk GaN and Its Homoepitaxial Film”, Journal of Electronic Materials 39, 2243 (2010)
[1]. X Z Du, Hai Lu, D J Chen, X Q Xiu, R Zhang, Y D Zheng, “UV light-emitting diodes at 340 nm fabricated on a bulk GaN substrate”, Chinese Physics Letters 27, 088105 (2010)